Figuring of elliptical hard X-ray focusing mirror using 1-dimensional numerically controlled local wet etchingYAMAMURA, Kazuya; TAKAI, Hiroyuki.Surface and interface analysis. 2008, Vol 40, Num 6-7, pp 1014-1018, issn 0142-2421, 5 p.Conference Paper

Kinetics of cuprous oxide etching with β-diketones in Supercritical CO₂XIAOYING SHAN; WATKINS, James J.Thin solid films. 2006, Vol 496, Num 2, pp 412-416, issn 0040-6090, 5 p.Article

The assessment of metal surface cleanliness by XPSSCHEUERLEIN, C; TABORELLI, M.Applied surface science. 2006, Vol 252, Num 12, pp 4279-4288, issn 0169-4332, 10 p.Article

Etching characteristics and mechanisms of SrBi2Ta2O9 thin films in CF4/Ar and Cl2/Ar inductively coupled plasmasEFREMOV, A. M; KIMA, Dong-Pyo; KIM, Chang-Il et al.Thin solid films. 2005, Vol 471, Num 1-2, pp 328-335, issn 0040-6090, 8 p.Article

Heteroepitaxial growth on microscale patterned silicon structuresVANAMU, G; DATYE, A. K; ZAIDI, Saleem H et al.Journal of crystal growth. 2005, Vol 280, Num 1-2, pp 66-74, issn 0022-0248, 9 p.Article

Selective electroless deposition of copper on polyimide surface by microcontact printingYI LI; DONGSHENG CHEN; QINGHUA LU et al.Applied surface science. 2005, Vol 241, Num 3-4, pp 471-476, issn 0169-4332, 6 p.Article

Surface pattern transfer in GaAs with molecular beams of Cl₂SCHMID, J. H; TIEDJE, T; MAR, R et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045315.1-045315.7, issn 1098-0121Article

Etching of As- and P-based III-V semiconductors in a planar inductively coupled BCl₃/Ar plasmaLEE, J. W; LIM, W. T; BAEK, I. K et al.Journal of electronic materials. 2004, Vol 33, Num 4, pp 358-363, issn 0361-5235, 6 p.Article

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off processVONCKEN, M. M. A. J; SCHERMER, J. J; BAUHUIS, G. J et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 7, pp 1801-1807, issn 0947-8396, 7 p.Article

Metal-assisted chemical etching in HF/Na₂S₂O₈ or HF/KMnO₄ produces porous siliconHADJERSI, T; GABOUZE, N; KOOIJ, E. S et al.Thin solid films. 2004, Vol 459, Num 1-2, pp 271-275, issn 0040-6090, 5 p.Conference Paper

Selective plasma etching of powder coatingsKUNAVER, M; MOZETIC, M; KLANJSEK-GUNDE, M et al.Thin solid films. 2004, Vol 459, Num 1-2, pp 115-117, issn 0040-6090, 3 p.Conference Paper

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologiesGIEHL, Alexander R; KESSLER, Matthias; GROSSE, Axel et al.Journal of micromechanics and microengineering (Print). 2003, Vol 13, Num 2, pp 238-245, issn 0960-1317, 8 p.Article

Fabrication of structures with III-V compound semiconductors embedded into 3D photonic crystalsHANAIZUMI, Osamu; SAKURAI, Yasuki; AIZAWA, Yoshizo et al.Thin solid films. 2003, Vol 426, Num 1-2, pp 172-177, issn 0040-6090, 6 p.Article

Percolation-dependent reaction time in the etching of disordered solidsKOLWANKAR, K. M; PLAPP, M; SAPOVAL, B et al.Europhysics letters (Print). 2003, Vol 62, Num 4, pp 519-525, issn 0295-5075, 7 p.Article

Focused ion beam fabrication of silicon print mastersLI, Hong-Wei; KANG, Dae-Joon; BLAMIRE, M. G et al.Nanotechnology (Bristol. Print). 2003, Vol 14, Num 2, pp 220-223, issn 0957-4484, 4 p.Conference Paper

Modelling of anisotropic etching of silicon: Anomalies due to facet boundary effectsELALAMY, Ziyad; LANDSBERGER, Leslie M; KAHRIZI, Mojtaba et al.Sensors and materials. 2003, Vol 15, Num 2, pp 67-81, issn 0914-4935, 15 p.Article

Anisotropic Si etching condition for preparing optically smooth surfacesSASAKI, Minoru; FUJII, Takehiro; HANE, Kazuhiro et al.Sensors and materials. 2003, Vol 15, Num 2, pp 83-92, issn 0914-4935, 10 p.Article

Study on the photoelectrochemical etching process of semiconducting 6H-SiC waferMOO WHAN SHIN; JUNG GYUN SONG.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 95, Num 3, pp 191-194, issn 0921-5107Article

Laser based etching technique for metallography and ceramographyPHILIP, John; JAYAKUMAR, T; RAJ, Baldev et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2002, Vol 338, Num 1-2, pp 17-23, issn 0921-5093, 7 p.Article

Real dimensional simulation of silicon etching in CF₄ + O₂ plasmaKNIZIKEVICIUS, R.Applied surface science. 2002, Vol 201, Num 1-4, pp 96-108, issn 0169-4332, 13 p.Article

X-ray photoelectron spectroscopy studies of CVD diamond filmsFAN, Y; FITZGERALD, A. G; JOHN, P et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 703-707, issn 0142-2421Conference Paper

F₂-laser ablation patterning of dielectric layersSCHÄFER, D; IHLEMANN, J; MAROWSKY, G et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 72, Num 3, pp 377-379, issn 0947-8396Article

High rate etching of sapphire wafer using Cl₂/BCl₃/Ar inductively coupled plasmasSUNG, Y. J; KIM, H. S; LEE, Y. H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 50-52, issn 0921-5107Article

Anisotropic etching of silicon on {111} and near {111} planesSONGSHENG TAN; BOUDREAU, Robert; REED, Michael L et al.Sensors and materials. 2001, Vol 13, Num 5, pp 303-313, issn 0914-4935Conference Paper

Wet etching of hydrogenated amorphous carbon filmsJARAMILLO, J. M; MANSANO, R. D; ZAMBOM, L. S et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 976-979, issn 0925-9635Conference Paper